Global (United States, European Union and China) SiC and GaN Power Devices Market Research Report 2019-2025


    Table of Contents

      1 Report Overview

      • 1.1 Research Scope
      • 1.2 Major Manufacturers Covered in This Report
      • 1.3 Market Segment by Type
        • 1.3.1 Global SiC and GaN Power Devices Market Size Growth Rate by Type (2019-2025)
        • 1.3.2 GaN Power Devices
        • 1.3.3 SiC Power Devices
      • 1.4 Market Segment by Application
        • 1.4.1 Global SiC and GaN Power Devices Market Share by Application (2019-2025)
        • 1.4.2 Consumer Electronics
        • 1.4.3 Automotive & Transportation
        • 1.4.4 Industrial Use
        • 1.4.5 Others
      • 1.5 Study Objectives
      • 1.6 Years Considered

      2 Global Growth Trends

      • 2.1 Production and Capacity Analysis
        • 2.1.1 Global SiC and GaN Power Devices Production Value 2014-2025
        • 2.1.2 Global SiC and GaN Power Devices Production 2014-2025
        • 2.1.3 Global SiC and GaN Power Devices Capacity 2014-2025
        • 2.1.4 Global SiC and GaN Power Devices Marketing Pricing and Trends
      • 2.2 Key Producers Growth Rate (CAGR) 2019-2025
        • 2.2.1 Global SiC and GaN Power Devices Market Size CAGR of Key Regions
        • 2.2.2 Global SiC and GaN Power Devices Market Share of Key Regions
      • 2.3 Industry Trends
        • 2.3.1 Market Top Trends
        • 2.3.2 Market Drivers

      3 Market Share by Manufacturers

      • 3.1 Capacity and Production by Manufacturers
        • 3.1.1 Global SiC and GaN Power Devices Capacity by Manufacturers
        • 3.1.2 Global SiC and GaN Power Devices Production by Manufacturers
      • 3.2 Revenue by Manufacturers
        • 3.2.1 SiC and GaN Power Devices Revenue by Manufacturers (2014-2019)
        • 3.2.2 SiC and GaN Power Devices Revenue Share by Manufacturers (2014-2019)
        • 3.2.3 Global SiC and GaN Power Devices Market Concentration Ratio (CR5 and HHI)
      • 3.3 SiC and GaN Power Devices Price by Manufacturers
      • 3.4 Key Manufacturers SiC and GaN Power Devices Plants/Factories Distribution and Area Served
      • 3.5 Date of Key Manufacturers Enter into SiC and GaN Power Devices Market
      • 3.6 Key Manufacturers SiC and GaN Power Devices Product Offered
      • 3.7 Mergers & Acquisitions, Expansion Plans

      4 Market Size by Type

      • 4.1 Production and Production Value for Each Type
        • 4.1.1 GaN Power Devices Production and Production Value (2014-2019)
        • 4.1.2 SiC Power Devices Production and Production Value (2014-2019)
      • 4.2 Global SiC and GaN Power Devices Production Market Share by Type
      • 4.3 Global SiC and GaN Power Devices Production Value Market Share by Type
      • 4.4 SiC and GaN Power Devices Ex-factory Price by Type

      5 Market Size by Application

      • 5.1 Overview
      • 5.2 Global SiC and GaN Power Devices Consumption by Application

      6 Production by Regions

      • 6.1 Global SiC and GaN Power Devices Production (History Data) by Regions 2014-2019
      • 6.2 Global SiC and GaN Power Devices Production Value (History Data) by Regions
      • 6.3 United States
        • 6.3.1 United States SiC and GaN Power Devices Production Growth Rate 2014-2019
        • 6.3.2 United States SiC and GaN Power Devices Production Value Growth Rate 2014-2019
        • 6.3.3 Key Players in United States
        • 6.3.4 United States SiC and GaN Power Devices Import & Export
      • 6.4 European Union
        • 6.4.1 European Union SiC and GaN Power Devices Production Growth Rate 2014-2019
        • 6.4.2 European Union SiC and GaN Power Devices Production Value Growth Rate 2014-2019
        • 6.4.3 Key Players in European Union
        • 6.4.4 European Union SiC and GaN Power Devices Import & Export
      • 6.5 China
        • 6.5.1 China SiC and GaN Power Devices Production Growth Rate 2014-2019
        • 6.5.2 China SiC and GaN Power Devices Production Value Growth Rate 2014-2019
        • 6.5.3 Key Players in China
        • 6.5.4 China SiC and GaN Power Devices Import & Export
      • 6.6 Rest of World
        • 6.6.1 Japan
        • 6.6.2 Korea
        • 6.6.3 India
        • 6.6.4 Southeast Asia

      7 SiC and GaN Power Devices Consumption by Regions

      • 7.1 Global SiC and GaN Power Devices Consumption (History Data) by Regions
      • 7.2 United States
        • 7.2.1 United States SiC and GaN Power Devices Consumption by Type
        • 7.2.2 United States SiC and GaN Power Devices Consumption by Application
      • 7.3 European Union
        • 7.3.1 European Union SiC and GaN Power Devices Consumption by Type
        • 7.3.2 European Union SiC and GaN Power Devices Consumption by Application
      • 7.4 China
        • 7.4.1 China SiC and GaN Power Devices Consumption by Type
        • 7.4.2 China SiC and GaN Power Devices Consumption by Application
      • 7.5 Rest of World
        • 7.5.1 Rest of World SiC and GaN Power Devices Consumption by Type
        • 7.5.2 Rest of World SiC and GaN Power Devices Consumption by Application
        • 7.5.1 Japan
        • 7.5.2 Korea
        • 7.5.3 India
        • 7.5.4 Southeast Asia

      8 Company Profiles

      • 8.1 Infineon
        • 8.1.1 Infineon Company Details
        • 8.1.2 Company Description and Business Overview
        • 8.1.3 Production and Revenue of SiC and GaN Power Devices
        • 8.1.4 SiC and GaN Power Devices Product Introduction
        • 8.1.5 Infineon Recent Development
      • 8.2 Rohm
        • 8.2.1 Rohm Company Details
        • 8.2.2 Company Description and Business Overview
        • 8.2.3 Production and Revenue of SiC and GaN Power Devices
        • 8.2.4 SiC and GaN Power Devices Product Introduction
        • 8.2.5 Rohm Recent Development
      • 8.3 Mitsubishi
        • 8.3.1 Mitsubishi Company Details
        • 8.3.2 Company Description and Business Overview
        • 8.3.3 Production and Revenue of SiC and GaN Power Devices
        • 8.3.4 SiC and GaN Power Devices Product Introduction
        • 8.3.5 Mitsubishi Recent Development
      • 8.4 STMicro
        • 8.4.1 STMicro Company Details
        • 8.4.2 Company Description and Business Overview
        • 8.4.3 Production and Revenue of SiC and GaN Power Devices
        • 8.4.4 SiC and GaN Power Devices Product Introduction
        • 8.4.5 STMicro Recent Development
      • 8.5 Fuji
        • 8.5.1 Fuji Company Details
        • 8.5.2 Company Description and Business Overview
        • 8.5.3 Production and Revenue of SiC and GaN Power Devices
        • 8.5.4 SiC and GaN Power Devices Product Introduction
        • 8.5.5 Fuji Recent Development
      • 8.6 Toshiba
        • 8.6.1 Toshiba Company Details
        • 8.6.2 Company Description and Business Overview
        • 8.6.3 Production and Revenue of SiC and GaN Power Devices
        • 8.6.4 SiC and GaN Power Devices Product Introduction
        • 8.6.5 Toshiba Recent Development
      • 8.7 Microsemi
        • 8.7.1 Microsemi Company Details
        • 8.7.2 Company Description and Business Overview
        • 8.7.3 Production and Revenue of SiC and GaN Power Devices
        • 8.7.4 SiC and GaN Power Devices Product Introduction
        • 8.7.5 Microsemi Recent Development
      • 8.8 United Silicon Carbide Inc.
        • 8.8.1 United Silicon Carbide Inc. Company Details
        • 8.8.2 Company Description and Business Overview
        • 8.8.3 Production and Revenue of SiC and GaN Power Devices
        • 8.8.4 SiC and GaN Power Devices Product Introduction
        • 8.8.5 United Silicon Carbide Inc. Recent Development
      • 8.9 GeneSic
        • 8.9.1 GeneSic Company Details
        • 8.9.2 Company Description and Business Overview
        • 8.9.3 Production and Revenue of SiC and GaN Power Devices
        • 8.9.4 SiC and GaN Power Devices Product Introduction
        • 8.9.5 GeneSic Recent Development
      • 8.10 Efficient Power Conversion (EPC)
        • 8.10.1 Efficient Power Conversion (EPC) Company Details
        • 8.10.2 Company Description and Business Overview
        • 8.10.3 Production and Revenue of SiC and GaN Power Devices
        • 8.10.4 SiC and GaN Power Devices Product Introduction
        • 8.10.5 Efficient Power Conversion (EPC) Recent Development
      • 8.11 GaN Systems
      • 8.12 VisIC Technologies LTD
      • 8.13 Transphorm

      9 Market Forecast

      • 9.1 Global Market Size Forecast
        • 9.1.1 Global SiC and GaN Power Devices Capacity, Production Forecast 2019-2025
        • 9.1.2 Global SiC and GaN Power Devices Production Value Forecast 2019-2025
      • 9.2 Market Forecast by Regions
        • 9.2.1 Global SiC and GaN Power Devices Production and Value Forecast by Regions 2019-2025
        • 9.2.2 Global SiC and GaN Power Devices Consumption Forecast by Regions 2019-2025
      • 9.3 United States
        • 9.3.1 Production and Value Forecast in United States
        • 9.3.2 Consumption Forecast in United States
      • 9.4 European Union
        • 9.4.1 Production and Value Forecast in European Union
        • 9.4.2 Consumption Forecast in European Union
      • 9.5 China
        • 9.5.1 Production and Value Forecast in China
        • 9.5.2 Consumption Forecast in China
      • 9.6 Rest of World
        • 9.6.1 Japan
        • 9.6.2 Korea
        • 9.6.3 India
        • 9.6.4 Southeast Asia
      • 9.7 Forecast by Type
        • 9.7.1 Global SiC and GaN Power Devices Production Forecast by Type
        • 9.7.2 Global SiC and GaN Power Devices Production Value Forecast by Type
      • 9.8 Consumption Forecast by Application

      10 Value Chain and Sales Channels Analysis

      • 10.1 Value Chain Analysis
      • 10.2 Sales Channels Analysis
        • 10.2.1 SiC and GaN Power Devices Sales Channels
        • 10.2.2 SiC and GaN Power Devices Distributors
      • 10.3 SiC and GaN Power Devices Customers

      11 Opportunities & Challenges, Threat and Affecting Factors

      • 11.1 Market Opportunities
      • 11.2 Market Challenges
      • 11.3 Porter's Five Forces Analysis

      12 Key Findings

        13 Appendix

        • 13.1 Research Methodology
          • 13.1.1 Methodology/Research Approach
            • 13.1.1.1 Research Programs/Design
            • 13.1.1.2 Market Size Estimation
            • 13.1.1.3 Market Breakdown and Data Triangulation
          • 13.1.2 Data Source
            • 13.1.2.1 Secondary Sources
            • 13.1.2.2 Primary Sources
        • 13.2 Author Details

        In 2019, the market size of SiC and GaN Power Devices is million US$ and it will reach million US$ in 2025, growing at a CAGR of from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
        In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for SiC and GaN Power Devices.

        This report studies the global market size of SiC and GaN Power Devices, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
        This study presents the SiC and GaN Power Devices production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
        For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.

        In global market, the following companies are covered:
        Infineon
        Rohm
        Mitsubishi
        STMicro
        Fuji
        Toshiba
        Microsemi
        United Silicon Carbide Inc.
        GeneSic
        Efficient Power Conversion (EPC)
        GaN Systems
        VisIC Technologies LTD
        Transphorm

        Market Segment by Product Type
        GaN Power Devices
        SiC Power Devices

        Market Segment by Application
        Consumer Electronics
        Automotive & Transportation
        Industrial Use
        Others

        Key Regions split in this report: breakdown data for each region.
        United States
        China
        European Union
        Rest of World (Japan, Korea, India and Southeast Asia)

        The study objectives are:
        To analyze and research the SiC and GaN Power Devices status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
        To present the key SiC and GaN Power Devices manufacturers, presenting the sales, revenue, market share, and recent development for key players.
        To split the breakdown data by regions, type, companies and applications
        To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
        To identify significant trends, drivers, influence factors in global and regions
        To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market

        In this study, the years considered to estimate the market size of SiC and GaN Power Devices are as follows:
        History Year: 2014-2018
        Base Year: 2018
        Estimated Year: 2019
        Forecast Year 2019 to 2025



        Summary:
        SiC and GaN Power Devices Market Research Report is SiC and GaN Power Devices Market Report. Get SiC and GaN Power Devices market research reports for Market Research, Analysis, Trends & Statistics. Latest Industry findings, analysis and Market Report on SiC and GaN Power Devices . SiC and GaN Power Devices Market Report is a syndicated market report to understand, Market Demand, Growth, trends analysis and Factor Influencing market in upcoming years.



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